vs-mbr3045ctpbf, vs-MBR3045CT-N3 www.vishay.com vishay semiconductors revision: 26-aug-11 1 document number: 94292 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schottky rectifier, 2 x 15 a features ? 150 c t j operation ? low forward voltage drop ? high frequency operation ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and mois ture resistance ? guard ring for enhanced ruggedness and long term reliability ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 ? halogen-free according to iec 61249-2-21 definition (-n3 only) description this center tap schottky rectif ier has been optimized for low reverse leakage at high tempe rature. the proprietary barrier technology allows for reliable operation up to 150 c junction temperature. typical applications are in switching power supplies, converters , freewheeling diodes, and reverse battery protection. product summary package to-220ab i f(av) 2 x 15 a v r 45 v v f at i f see electrical table i rm max. 100 ma at 125 c t j max. 150 c diode variation common cathode e as 10 mj anode 13 2 base common cathode 2 common cathode anode to-220ab major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform (per device) 30 a v rrm 35/45 v i frm t c = 123 c (per leg) 30 a i fsm t p = 5 s sine 1020 v f 20 a pk , t j = 125 c 0.6 v t j range - 65 to 150 c voltage ratings parameter symbol vs-mbr3045ctpbf vs-MBR3045CT-N3 units maximum dc reverse voltage v r 45 45 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current per leg i f(av) t c = 123 c, rated v r 15 a per device 30 peak repetitive forward current per leg i frm rated v r , square wave, 20 khz, t c = 123 c 30 non-repetitive peak surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 1020 surge applied at rated l oad conditions halfwave, single phase, 60 hz 200 non-repetitive avalanche energy per leg e as t j = 25 c, i as = 2 a, l = 5 mh 10 mj repetitive avalanche current per leg i ar current decaying linearly to zero in 1 s frequency limited by t j maximum v a = 1.5 x v r typical 2a
vs-mbr3045ctpbf, vs-MBR3045CT-N3 www.vishay.com vishay semiconductors revision: 26-aug-11 2 document number: 94292 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm (1) 30 a t j = 25 c 0.76 v 20 a t j = 125 c 0.6 30 a 0.72 maximum instantaneous reverse current i rm (1) t j = 25 c rated dc voltage 1 ma t j = 125 c 100 threshold voltage v f(to) t j = t j maximum 0.29 v forward slope resistance r t 13.6 m ? maximum junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz) 25 c 800 pf typical series inductance l s measured from top of terminal to mounting plane 8.0 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction temperature range t j - 65 to 150 c maximum storage temperature range t stg - 65 to 175 maximum thermal resistance, junction to case per leg r thjc dc operation 1.5 c/w typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased only for to-220 0.50 maximum thermal resistance, junction to ambient r thja dc operation for d 2 pak and to-262 50 approximate weight 2g 0.07 oz. mounting torque minimum non-lubricated threads 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220ab mbr3045ct
vs-mbr3045ctpbf, vs-MBR3045CT-N3 www.vishay.com vishay semiconductors revision: 26-aug-11 3 document number: 94292 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics (per leg) fig. 2 - typical values of reverse current vs. reverse voltage (per leg) fig. 3 - typical junction capacitance vs. reverse voltage (per leg) fig. 4 - maximum thermal impedance z thjc characteristics (per leg) 1 10 1.5 v fm - forward voltage drop (v) i f - instantaneous forward current (a) 100 0.6 0 0.3 0.9 1.2 t j = 150 c t j = 125 c t j = 25 c 0.1 1 10 100 0 v r - reverse voltage (v) i r - reverse current (ma) 50 40 30 20 10 0.01 0.001 t j = 150 c 1000 t j = 50 c t j = 100 c t j = 125 c t j = 75 c t j = 25 c 1000 040 v r - reverse voltage (v) c t - junction capacitance (pf) 20 100 50 30 10 t j = 25 c 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single p u lse (thermal resistance) 1 d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 n otes: 1. d u ty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c p dm t 1 t 2 0.01 100 10
vs-mbr3045ctpbf, vs-MBR3045CT-N3 www.vishay.com vishay semiconductors revision: 26-aug-11 4 document number: 94292 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current (per leg) fig. 6 - forward power loss characteristics (per leg) fig. 7 - maximum non-repeti tive surge current (per leg) note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 015 i f(av) - average forward current (a) allowable case temperature (c) 120 5 see note (1) 10 150 s qu are w a v e (d = 0.50) rated v r applied 25 100 140 dc 20 110 130 0 015 6 average power loss (w) i f(av) - average forward current (a) 5 3 25 15 9 d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 20 10 12 rms limit dc 100 1000 t p - square wave pulse duration (s) i fsm - non-repetitive surge current (a) 100 10 000 10 1000 at any rated load condition and with rated v rrm applied following surge
vs-mbr3045ctpbf, vs-MBR3045CT-N3 www.vishay.com vishay semiconductors revision: 26-aug-11 5 document number: 94292 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-mbr3045ctpbf 50 1000 anti static plastic tube vs-MBR3045CT-N3 50 1000 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95222 part marking information to-220ab pbf www.vishay.com/doc?95225 to-220ab -n3 www.vishay.com/doc?95028 - schottky mbr series - current rating (30 = 30 a) - voltage ratings (045 = 45 v) - ct = essential part number device code 6 2 4 3 5 mbr 30 45 ct pbf 1 vs- - vishay semiconductors product - pbf = lead (pb)-free and rohs compliant -n3 = halogen-free, rohs compliant, and totally lead (pb)-free environmental digit 2 3 4 5 6 1
document number: 95222 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ab outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0.005" ) per side. these dimensions are measured at the outermost extremes of th e plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimensions: inches (6) thermal pad contour optional within dimensions e, h1, d2 and e1 (7) dimensions e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to- 220, except a2 (maximum) and d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e 10.11 10.51 0.398 0.414 3, 6 a1 1.14 1.40 0.045 0.055 e1 6.86 8.89 0.270 0.350 6 a2 2.56 2.92 0.101 0.115 e2 - 0.76 - 0.030 7 b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105 b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208 b2 1.20 1.73 0.047 0.068 h1 6.09 6.48 0.240 0.255 6, 7 b3 1.14 1.73 0.045 0.068 4 l 13.52 14.02 0.532 0.552 c 0.36 0.61 0.014 0.024 l1 3.32 3.82 0.131 0.150 2 c1 0.36 0.56 0.014 0.022 4 ? p 3.54 3.73 0.139 0.147 d 14.85 15.25 0.585 0.600 3 q 2.60 3.00 0.102 0.118 d1 8.38 9.02 0.330 0.355 ? 90 to 93 90 to 93 d2 11.68 12.88 0.460 0.507 6 13 2 d d1 h1 q 13 2 c c d d 3 x b2 3 x b (b, b2) b1, b3 (h1) d2 detail b c a b l e1 lead tip e e2 ? p 0.014 a b m m 0.015 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1. - anode/open 2. - cathode 3. - anode conforms to jedec outline to-220ab (6) (6) (7) (6) (7) e 2 x l1 (2) detail b s ection c - c and d - d view a - a ba s e metal plating (4) (4) c1 c (6) thermal pad (e) e1 (6)
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